Contents of JSA Vol.10 No.1 (2003) 1 - 119
(S): Articles presented at the 4th Korea-Japan (KVS-SASJ) International Symposium on Surface Analysis in Hiroshima, Japan, Nov. 18-19, 2002.
(J): Articles in Japanese


Essential ideas of science


Surface Properties and Characterization of PSII-modified Polymers (S)
Common Data Processing System Version 7 (S)
Change of Ti 2p XPS spectrum for Titanium Oxide by Ar Ion Bombardment (S)
SIMS Deconvolution of Delta Layers in Silicon (S)
A determination method of the peak location with polynomial for XPS spectra(J)

Technical Reports

High Resolution Sputter Depth Profiling using Low Energy Ion Gun (J)
Damage distribution in Si surface by 0.5keV Ar+ ion bombardment (S)
Reference Materials for SIMS Depth Profiling Analysis (S)


Progress in Quantitative Sputter Depth Profiling using the MRI- model
Surface Analysis of III-V Compound Semiconductors and their Sulfur-Treated Surfaces− Surface Atomic Composition, Structures, and Electronic States − (J)
TEM Characterization of Galvannealed Steel (J)
Sputtering rate of some transition metal silicides; comparison with that of elements (J)


Development of Cathodes as an Origin of Surface Science (J)


On Secondary Electrons (2) Correlation with work function (J)

6th Meeting of the SASJ SERD Project (J)
1st Meeting of the SASJ Background Project (J)
SASJ member ID application form
Application form for Surface Analyst Accredited
Spectral Data Submission Guide
Spectral Data Submission Form
Instructions to Authors
JSA Contribution Form
Copyright transfer agreement
Order Forms